Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface
Identifieur interne : 000E14 ( France/Analysis ); précédent : 000E13; suivant : 000E15Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface
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Abstract
The indium-stabilized GaAs(001)-c(8×2) surface was investigated by surface x-ray diffraction and x-ray standing waves. We find that the reconstruction closely resembles the c(8×2) structure described by the recently proposed unified model for clean III-V semiconductor surfaces [Kumpf , Phys. Rev. Lett. 86, 3586 (2001)]. Consistent with this unified model, no In dimers are found for the present surface. Instead, for coverages less than 0.25 monolayers, the In adatoms adsorb at the initially unoccupied hollow sites to form In rows along the [110] direction. Between the In rows, surface and subsurface Ga dimers are found to coexist in the trench areas. Above 0.25 monolayers, the additional In adatoms fill the trenches and replace the surface Ga atoms. The final structure of the surface layer is essentially identical to the InAs clean surface, except that the In heights are substantially different due to the lateral strain induced by the lattice mismatch. This structural difference explains why the ladder-type pattern observed previously by scanning tunneling microscopy only appears for the In/GaAs(001) and InAs/GaAs(001) surfaces, but not for the InAs clean surface. The structural model we propose for the In-stabilized GaAs(001)-c(8×2) surface, which fully agrees with the scanning tunneling microscopy results, should therefore generally apply to strained InAs(001) surfaces.
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Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Experimentelle Physik II, Universitat Wurzburg, D-97074 Wurzburg, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Experimentelle Physik II, Universitat Wurzburg, D-97074 Wurzburg</wicri:regionArea><placeName><region type="land" nuts="1">Bavière</region><region type="district" nuts="2">District de Basse-Franconie</region><settlement type="city">Wurtzbourg</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-70569 Stuttgart</wicri:regionArea><wicri:noRegion>70569 Stuttgart</wicri:noRegion><wicri:noRegion>D-70569 Stuttgart</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="09"><s1>II. Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>II. Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg</wicri:regionArea><wicri:noRegion>22761 Hamburg</wicri:noRegion><wicri:noRegion>D-22761 Hamburg</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="10"><s1>Norwegian University of Science and Technology, N-7491 Trondheim, Norway</s1></inist:fA14><country xml:lang="fr">Norvège</country><wicri:regionArea>Norwegian University of Science and Technology, N-7491 Trondheim</wicri:regionArea><wicri:noRegion>N-7491 Trondheim</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="11"><s1>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France</s1></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city"> Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Kumpf, C" uniqKey="Kumpf C">C. Kumpf</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Kazimirov, A" uniqKey="Kazimirov A">A. Kazimirov</name></author><author><name sortKey="Lyman, P F" uniqKey="Lyman P">P. F. Lyman</name></author><author><name sortKey="Scherb, G" uniqKey="Scherb G">G. Scherb</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Bedzyk, M J" uniqKey="Bedzyk M">M. J. Bedzyk</name></author><author><name sortKey="Nielsen, M" uniqKey="Nielsen M">M. Nielsen</name></author><author><name sortKey="Feidenhansl, R" uniqKey="Feidenhansl R">R. Feidenhansl</name></author><author><name sortKey="Johnson, R L" uniqKey="Johnson R">R. L. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Fimland, B O" uniqKey="Fimland B">B. O. Fimland</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author><author><name sortKey="Zegenhagen, J" uniqKey="Zegenhagen J">J. Zegenhagen</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Department of Materials Science and Materials Research Center, Northwestern University, Evanston</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0032669</idno><date when="2002-12-15">2002-12-15</date><idno type="stanalyst">PASCAL 03-0032669 AIP</idno><idno type="RBID">Pascal:03-0032669</idno><idno type="wicri:Area/Main/Corpus">00E035</idno><idno type="wicri:Area/Main/Repository">00DB95</idno><idno type="wicri:Area/France/Extraction">000E14</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Adsorbed layers</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium</term><term>Internal stresses</term><term>STM</term><term>Surface reconstruction</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6835B</term><term>6110E</term><term>6849U</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium</term><term>Semiconducteur III-V</term><term>Couche adsorbée</term><term>Reconstruction surface</term><term>Diffraction RX</term><term>Contrainte interne</term><term>STM</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The indium-stabilized GaAs(001)-c(8×2) surface was investigated by surface x-ray diffraction and x-ray standing waves. We find that the reconstruction closely resembles the c(8×2) structure described by the recently proposed unified model for clean III-V semiconductor surfaces [Kumpf , Phys. Rev. Lett. 86, 3586 (2001)]. Consistent with this unified model, no In dimers are found for the present surface. Instead, for coverages less than 0.25 monolayers, the In adatoms adsorb at the initially unoccupied hollow sites to form In rows along the [110] direction. Between the In rows, surface and subsurface Ga dimers are found to coexist in the trench areas. Above 0.25 monolayers, the additional In adatoms fill the trenches and replace the surface Ga atoms. The final structure of the surface layer is essentially identical to the InAs clean surface, except that the In heights are substantially different due to the lateral strain induced by the lattice mismatch. This structural difference explains why the ladder-type pattern observed previously by scanning tunneling microscopy only appears for the In/GaAs(001) and InAs/GaAs(001) surfaces, but not for the InAs clean surface. The structural model we propose for the In-stabilized GaAs(001)-c(8×2) surface, which fully agrees with the scanning tunneling microscopy results, should therefore generally apply to strained InAs(001) surfaces.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>66</s2></fA05><fA06><s2>23</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural analysis of the indium-stabilized GaAs(001)-c(8×2) surface</s1></fA08><fA11 i1="01" i2="1"><s1>LEE (T.-L.)</s1></fA11><fA11 i1="02" i2="1"><s1>KUMPF (C.)</s1></fA11><fA11 i1="03" i2="1"><s1>KAZIMIROV (A.)</s1></fA11><fA11 i1="04" i2="1"><s1>LYMAN (P. F.)</s1></fA11><fA11 i1="05" i2="1"><s1>SCHERB (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>BEDZYK (M. J.)</s1></fA11><fA11 i1="07" i2="1"><s1>NIELSEN (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>FEIDENHANSL (R.)</s1></fA11><fA11 i1="09" i2="1"><s1>JOHNSON (R. L.)</s1></fA11><fA11 i1="10" i2="1"><s1>FIMLAND (B. O.)</s1></fA11><fA11 i1="11" i2="1"><s1>ZEGENHAGEN (J.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA14 i1="02"><s1>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France</s1><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>Experimentelle Physik II, Universitat Wurzburg, D-97074 Wurzburg, Germany</s1></fA14><fA14 i1="04"><s1>Department of Materials Science, Northwestern University, Evanston, Illinois 60208</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="05"><s1>Max-Planck-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-70569 Stuttgart, Germany</s1></fA14><fA14 i1="06"><s1>Department of Materials Science and Materials Research Center, Northwestern University, Evanston, Illinois 60208</s1><sZ>6 aut.</sZ></fA14><fA14 i1="07"><s1>Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439</s1><sZ>6 aut.</sZ></fA14><fA14 i1="08"><s1>Condensed Matter Physics and Chemistry Department, Riso¬ National Laboratory, DK-4000 Roskilde, Denmark</s1><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="09"><s1>II. Institut fur Experimentalphysik, Universitat Hamburg, D-22761 Hamburg, Germany</s1></fA14><fA14 i1="10"><s1>Norwegian University of Science and Technology, N-7491 Trondheim, Norway</s1></fA14><fA14 i1="11"><s1>European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France</s1></fA14><fA20><s2>235301-235301-9</s2></fA20><fA21><s1>2002-12-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0032669</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The indium-stabilized GaAs(001)-c(8×2) surface was investigated by surface x-ray diffraction and x-ray standing waves. We find that the reconstruction closely resembles the c(8×2) structure described by the recently proposed unified model for clean III-V semiconductor surfaces [Kumpf , Phys. Rev. Lett. 86, 3586 (2001)]. Consistent with this unified model, no In dimers are found for the present surface. Instead, for coverages less than 0.25 monolayers, the In adatoms adsorb at the initially unoccupied hollow sites to form In rows along the [110] direction. Between the In rows, surface and subsurface Ga dimers are found to coexist in the trench areas. Above 0.25 monolayers, the additional In adatoms fill the trenches and replace the surface Ga atoms. The final structure of the surface layer is essentially identical to the InAs clean surface, except that the In heights are substantially different due to the lateral strain induced by the lattice mismatch. This structural difference explains why the ladder-type pattern observed previously by scanning tunneling microscopy only appears for the In/GaAs(001) and InAs/GaAs(001) surfaces, but not for the InAs clean surface. The structural model we propose for the In-stabilized GaAs(001)-c(8×2) surface, which fully agrees with the scanning tunneling microscopy results, should therefore generally apply to strained InAs(001) surfaces.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A10E</s0></fC02><fC02 i1="03" i2="3"><s0>001B60A10</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>6110E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6849U</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Couche adsorbée</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Adsorbed layers</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Reconstruction surface</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Surface reconstruction</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Diffraction RX</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>XRD</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Contrainte interne</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Internal stresses</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>STM</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>STM</s0></fC03><fN21><s1>013</s1></fN21><fN47 i1="01" i2="1"><s0>0301M000888</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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